SI4160DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4160DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4160DY-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 15A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2071 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25.4A (Tc) | |
| Basis Produktnummer | SI4160 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4160DY-T1-GE3.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | SI4160DY-T1-GE3 | SI4156DY-T1-GE3 | SI4158DY-T1-GE3 | SI4154DY-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA | 2.2V @ 250µA | 2.1V @ 250µA | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±16V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2071 pF @ 15 V | 1700 pF @ 15 V | 5710 pF @ 10 V | 4230 pF @ 20 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | SI4160 | SI4156 | SI4158 | SI4154 |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 20 V | 40 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | 42 nC @ 10 V | 132 nC @ 10 V | 105 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) | 2.5W (Ta), 6W (Tc) | 3W (Ta), 6W (Tc) | 3.5W (Ta), 7.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 15A, 10V | 6mOhm @ 15.7A, 10V | 2.5mOhm @ 20A, 10V | 3.3mOhm @ 15A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25.4A (Tc) | 24A (Tc) | 36.5A (Tc) | 36A (Tc) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SI4160DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4160DY-T1-GE3 - Vishay Siliconix.
SI4156DYElectro-Films (EFI) / VishaySI4156DY-T1-GE3Vishay SiliconixMOSFET N-CH 30V 24A 8SOSI4156DY-T1-E3Electro-Films (EFI) / VishaySI4158DY-T1-GE3Vishay SiliconixMOSFET N-CH 20V 36.5A 8SOSI4160DYElectro-Films (EFI) / VishaySI4162DY-T1-E3Electro-Films (EFI) / VishaySI4154DY-T1-GE3Vishay SiliconixMOSFET N-CH 40V 36A 8SOSI4164DYElectro-Films (EFI) / VishaySI4160DY-TI-GE3Electro-Films (EFI) / VishaySI4164DY-T1-GE3Vishay SiliconixMOSFET N-CH 30V 30A 8SOSI4160DY-T1-E3Electro-Films (EFI) / Vishay
SI4164DY-T1-E3VBsemiSI4164DY-T1-GE3 MOSElectro-Films (EFI) / VishaySI4154DYElectro-Films (EFI) / VishaySI4162DYElectro-Films (EFI) / VishaySI4162DY-T1-GE3Vishay SiliconixMOSFET N-CH 30V 19.3A 8SOSI4162DY-T1-GE3 MOSElectro-Films (EFI) / VishaySI4154DY-T1-GE3 MOSElectro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.