SI4154DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4154DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4154DY-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 15A, 10V | |
Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4230 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 36A (Tc) | |
Basis Produktnummer | SI4154 |
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Produktiounsattriff | ||||
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Part Number | SI4154DY-T1-GE3 | SI4160DY-T1-GE3 | SI4143DY-T1-GE3 | SI4156DY-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 36A (Tc) | 25.4A (Tc) | 25.3A (Tc) | 24A (Tc) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 15A, 10V | 4.9mOhm @ 15A, 10V | 6.2mOhm @ 12A, 10V | 6mOhm @ 15.7A, 10V |
Vgs (Max) | ±20V | ±20V | ±25V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TA) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | SI4154 | SI4160 | SI4143 | SI4156 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) | 2.5W (Ta), 5.7W (Tc) | 6W (Tc) | 2.5W (Ta), 6W (Tc) |
Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 30 V | 30 V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.4V @ 250µA | 2.5V @ 250µA | 2.2V @ 250µA |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Input Capacitance (Ciss) (Max) @ Vds | 4230 pF @ 20 V | 2071 pF @ 15 V | 6630 pF @ 15 V | 1700 pF @ 15 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | 54 nC @ 10 V | 167 nC @ 10 V | 42 nC @ 10 V |
Eroflueden SI4154DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4154DY-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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