SI4162DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4162DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4162DY-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1155 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19.3A (Tc) | |
| Basis Produktnummer | SI4162 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4162DY-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI4162DY-T1-GE3 | SI4160DY-T1-GE3 | SI4158DY-T1-GE3 | SI4164DY-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1155 pF @ 15 V | 2071 pF @ 15 V | 5710 pF @ 10 V | 3545 pF @ 15 V |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 20A, 10V | 4.9mOhm @ 15A, 10V | 2.5mOhm @ 20A, 10V | 3.2mOhm @ 15A, 10V |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19.3A (Tc) | 25.4A (Tc) | 36.5A (Tc) | 30A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) | 2.5W (Ta), 5.7W (Tc) | 3W (Ta), 6W (Tc) | 3W (Ta), 6W (Tc) |
| Vgs (Max) | ±20V | ±20V | ±16V | ±20V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 20 V | 30 V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 54 nC @ 10 V | 132 nC @ 10 V | 95 nC @ 10 V |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 2.4V @ 250µA | 2.1V @ 250µA | 2.5V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Basis Produktnummer | SI4162 | SI4160 | SI4158 | SI4164 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Eroflueden SI4162DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4162DY-T1-GE3 - Vishay Siliconix.
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| Brasilien | 7 | |
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| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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