IRFS11N50ATRLP Tech Spezifikatioune
Vishay Siliconix - IRFS11N50ATRLP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFS11N50ATRLP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263AB | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 520mOhm @ 6.6A, 10V | |
Power Dissipation (Max) | 170W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1423 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | IRFS11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFS11N50ATRLP.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFS11N50ATRLP | IRFS11N50A | IRFS17N20D | IRFS150A |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Infineon Technologies | Fairchild Semiconductor |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Bulk |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | - | HEXFET® | - |
Power Dissipation (Max) | 170W (Tc) | 170W (Tc) | 3.8W (Ta), 140W (Tc) | 100W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | 52 nC @ 10 V | 50 nC @ 10 V | 97 nC @ 10 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3P-3 Full Pack |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5.5V @ 250µA | 4V @ 250µA |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 1423 pF @ 25 V | 1423 pF @ 25 V | 1100 pF @ 25 V | 2270 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 520mOhm @ 6.6A, 10V | 520mOhm @ 6.6A, 10V | 170mOhm @ 9.8A, 10V | 40mOhm @ 15.5A, 10V |
Basis Produktnummer | IRFS11 | IRFS11 | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 11A (Tc) | 16A (Tc) | 31A (Tc) |
Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 200 V | 100 V |
Supplier Device Package | TO-263AB | D²PAK (TO-263) | D2PAK | TO-3PF |
Eroflueden IRFS11N50ATRLP PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFS11N50ATRLP - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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