IRFS150A Tech Spezifikatioune
Fairchild Semiconductor - IRFS150A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - IRFS150A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-3PF | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 15.5A, 10V | |
| Power Dissipation (Max) | 100W (Tc) | |
| Package / Case | TO-3P-3 Full Pack | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2270 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 31A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor IRFS150A.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | IRFS150A | IRFS17N20D | IRFS11N50ATRLP | IRFS17N20DTRLP |
| Hiersteller | Fairchild Semiconductor | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Supplier Device Package | TO-3PF | D2PAK | TO-263AB | D2PAK |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V | 50 nC @ 10 V | 52 nC @ 10 V | 50 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 31A (Tc) | 16A (Tc) | 11A (Tc) | 16A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2270 pF @ 25 V | 1100 pF @ 25 V | 1423 pF @ 25 V | 1100 pF @ 25 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5.5V @ 250µA | 4V @ 250µA | 5.5V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 100W (Tc) | 3.8W (Ta), 140W (Tc) | 170W (Tc) | 3.8W (Ta), 140W (Tc) |
| Package protegéieren | Bulk | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 15.5A, 10V | 170mOhm @ 9.8A, 10V | 520mOhm @ 6.6A, 10V | 170mOhm @ 9.8A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package / Case | TO-3P-3 Full Pack | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 500 V | 200 V |
| Serie | - | HEXFET® | - | HEXFET® |
| Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
IRFS17N20DTRVBSEMI
IRFS123LAPIS Technology
IRFS11N50APBFVishayIRFS17N20DInfineon TechnologiesMOSFET N-CH 200V 16A D2PAKIRFS1470IRIRFS140AIRFS17N20DTRLP MOSIRIRFS11N50ATRLPBFIRIRFS17N20D MOSIRIRFS17N20DPbF MOSIRIRFS1Z0TRIR/VISHAYIRFS1Z0IRIRFS120LAPIS TechnologyIRFS11N50ATRLPVishay SiliconixMOSFET N-CH 500V 11A TO263ABIRFS150SECIRFS17N20DTRLPInfineon TechnologiesMOSFET N-CH 200V 16A D2PAKIRFS17N20DPBFInfineon TechnologiesMOSFET N-CH 200V 16A D2PAKIRFS11N50ATRIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.