IRFRC20TRPBF Tech Spezifikatioune
Vishay Siliconix - IRFRC20TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFRC20TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | |
Basis Produktnummer | IRFRC20 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFRC20TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFRC20TRPBF | IRFRC20 | IRFRC20TR | IRFRC20TRLPBF |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | IRFRC20 | IRFRC20 | IRFRC20 | IRFRC20 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | 18 nC @ 10 V | 18 nC @ 10 V | 18 nC @ 10 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | 2.5W (Ta), 42W (Tc) | 2.5W (Ta), 42W (Tc) | 2.5W (Ta), 42W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 350 pF @ 25 V | 350 pF @ 25 V | 350 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V | 4.4Ohm @ 1.2A, 10V | 4.4Ohm @ 1.2A, 10V | 4.4Ohm @ 1.2A, 10V |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 2A (Tc) | 2A (Tc) | 2A (Tc) |
Eroflueden IRFRC20TRPBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFRC20TRPBF - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.