IRFB9N65A Tech Spezifikatioune
Vishay Siliconix - IRFB9N65A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFB9N65A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 930mOhm @ 5.1A, 10V | |
Power Dissipation (Max) | 167W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.5A (Tc) | |
Basis Produktnummer | IRFB9N65 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFB9N65A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFB9N65A | IRFB812PBF | IRFB9N65APBF | IRFBA1405P |
Hiersteller | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | 20 nC @ 10 V | 48 nC @ 10 V | 260 nC @ 10 V |
Basis Produktnummer | IRFB9N65 | IRFB812 | IRFB9 | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 175°C (TJ) |
Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | SUPER-220™ (TO-273AA) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 930mOhm @ 5.1A, 10V | 2.2Ohm @ 2.2A, 10V | 930mOhm @ 5.1A, 10V | 5mOhm @ 101A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 25 V | 810 pF @ 25 V | 1417 pF @ 25 V | 5480 pF @ 25 V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 650 V | 500 V | 650 V | 55 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.5A (Tc) | 3.6A (Tc) | 8.5A (Tc) | 174A (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±30V | ±20V | ±30V | ±20V |
Serie | - | HEXFET® | - | HEXFET® |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-273AA |
Package protegéieren | Tube | Tube | Tube | Tube |
Power Dissipation (Max) | 167W (Tc) | 78W (Tc) | 167W (Tc) | 330W (Tc) |
Eroflueden IRFB9N65A PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFB9N65A - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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