IRFB9N30A Tech Spezifikatioune
Vishay Siliconix - IRFB9N30A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFB9N30A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.6A, 10V | |
| Power Dissipation (Max) | 96W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 300 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.3A (Tc) | |
| Basis Produktnummer | IRFB9 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFB9N30A.
| Produktiounsattriff |  |
 |
|
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|---|---|---|---|---|
| Part Number | IRFB9N30A | IRFBA1405PPBF | IRFBA1404PPBF | IRFB9N65A |
| Hiersteller | Vishay Siliconix | International Rectifier | International Rectifier | Vishay Siliconix |
| Supplier Device Package | TO-220AB | SUPER-220™ (TO-273AA) | SUPER-220™ (TO-273AA) | TO-220AB |
| Package / Case | TO-220-3 | TO-273AA | TO-273AA | TO-220-3 |
| Package protegéieren | Tube | Bulk | Bulk | Tube |
| Entworf fir Source Voltage (Vdss) | 300 V | 55 V | 40 V | 650 V |
| Vgs (Max) | ±30V | ±20V | ±20V | ±30V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| FET Feature | - | - | - | - |
| Basis Produktnummer | IRFB9 | - | - | IRFB9N65 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.3A (Tc) | 174A (Tc) | 206A (Tc) | 8.5A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 260 nC @ 10 V | 200 nC @ 10 V | 48 nC @ 10 V |
| Power Dissipation (Max) | 96W (Tc) | 330W (Tc) | 300W (Tc) | 167W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V | 5480 pF @ 25 V | 7360 pF @ 25 V | 1417 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | HEXFET® | HEXFET® | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.6A, 10V | 5mOhm @ 101A, 10V | 3.7mOhm @ 95A, 10V | 930mOhm @ 5.1A, 10V |
Eroflueden IRFB9N30A PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFB9N30A - Vishay Siliconix.
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IRFB812PBFInfineon TechnologiesMOSFET N CH 500V 3.6A TO220ABIRFB830 800/RIRFB9N60APBFVishay SiliconixMOSFET N-CH 600V 9.2A TO220ABIRFB7746PBFInternational RectifierMOSFET N-CH 75V 59A TO220ABIRFB7787PBFInternational RectifierIRFB7787 - 12V-300V N-CHANNEL POIRFB7740PBF MOSIRIRFB812IRIRFB9N60AVishay SiliconixMOSFET N-CH 600V 9.2A TO220ABIRFB9N65APBFVishay SiliconixMOSFET N-CH 650V 8.5A TO220ABIRFBA31N50LIRIRFB7N60C3PBFIR
IRFB7740PBFInfineon TechnologiesMOSFET N-CH 75V 87A TO220ABIRFBA1405PInfineon TechnologiesMOSFET N-CH 55V 174A SUPER-220| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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