IRFBA1405PPBF Tech Spezifikatioune
International Rectifier - IRFBA1405PPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFBA1405PPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SUPER-220™ (TO-273AA) | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 101A, 10V | |
| Power Dissipation (Max) | 330W (Tc) | |
| Package / Case | TO-273AA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 174A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFBA1405PPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFBA1405PPBF | IRFB9N60A | IRFBC20SPBF | IRFBC20S |
| Hiersteller | International Rectifier | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 174A (Tc) | 9.2A (Tc) | 2.2A (Tc) | 2.2A (Tc) |
| Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
| Power Dissipation (Max) | 330W (Tc) | 170W (Tc) | 3.1W (Ta), 50W (Tc) | 3.1W (Ta), 50W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | SUPER-220™ (TO-273AA) | TO-220AB | D²PAK (TO-263) | D²PAK (TO-263) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 49 nC @ 10 V | 18 nC @ 10 V | 18 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Entworf fir Source Voltage (Vdss) | 55 V | 600 V | 600 V | 600 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -40°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 101A, 10V | 750mOhm @ 5.5A, 10V | 4.4Ohm @ 1.3A, 10V | 4.4Ohm @ 1.3A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 25 V | 1400 pF @ 25 V | 350 pF @ 25 V | 350 pF @ 25 V |
| Serie | HEXFET® | - | - | - |
| Package / Case | TO-273AA | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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