1N3767 Tech Spezifikatioune
Solid State Inc. - 1N3767 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N3767
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | |
| Voltage - DC Reverse (Vr) (Max) | 900 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 900 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 40A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N3767.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | 1N3767 | 1N3768 | 1N3766 | 1N3768R |
| Hiersteller | Solid State Inc. | Microchip Technology | Solid State Inc. | GeneSiC Semiconductor |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | 1.4 V @ 110 A | 1.19 V @ 90 A | 1.2 V @ 35 A |
| Supplier Device Package | DO-5 | DO-203AB (DO-5) | DO-5 | DO-5 |
| Serie | - | - | - | - |
| Capacitance @ Vr, F. | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 900 V | 1000 V | 800 V | 1000 V |
| Technologie | Standard | Standard | Standard | Standard, Reverse Polarity |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 190°C |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 900 V | 10 µA @ 1000 V | 10 µA @ 800 V | 10 µA @ 50 V |
| Package protegéieren | Box | Bulk | Box | Bulk |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Chassis, Stud Mount |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 40A | 35A | 40A | 35A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
1N3768Microchip TechnologySTANDARD RECTIFIER1N3766Solid State Inc.DIODE GEN PURP 800V 40A DO51N3768RGeneSiC SemiconductorDIODE GEN PURP REV 1KV 35A DO5
1N3766AMSCIGBT Module1N3767Microchip TechnologySTANDARD RECTIFIER1N3766GeneSiC SemiconductorDIODE GEN PURP 800V 35A DO51N3768Solid State Inc.DIODE GEN PURP 1KV 40A DO51N3768RSolid State Inc.DIODE GEN PURP REV 1KV 40A DO51N3766RSolid State Inc.DIODE GEN PURP REV 800V 40A DO51N3767GeneSiC SemiconductorDIODE GEN PURP 900V 35A DO51N3766RMicrochip TechnologySTANDARD RECTIFIER1N3768RMicrochip TechnologySTANDARD RECTIFIER1N3768AMSCIGBT Module1N3765RSolid State Inc.DIODE GEN PURP REV 700V 40A DO51N3768GeneSiC SemiconductorDIODE GEN PURP 1KV 35A DO51N3765RMicrochip TechnologyDIODE GEN PURP 700V 35A DO51N3766Microchip TechnologySTANDARD RECTIFIER1N3766RGeneSiC SemiconductorDIODE GEN PURP REV 800V 35A DO5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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