1N3767 Tech Spezifikatioune
GeneSiC Semiconductor - 1N3767 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N3767
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 35 A | |
| Voltage - DC Reverse (Vr) (Max) | 900 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AB, DO-5, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N3767 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N3767.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N3767 | 1N3768 | 1N3766 | 1N3879 |
| Hiersteller | GeneSiC Semiconductor | Solid State Inc. | Microchip Technology | Microchip Technology |
| Voltage - DC Reverse (Vr) (Max) | 900 V | 1000 V | 800 V | 50 V |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 175°C |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Supplier Device Package | DO-5 | DO-5 | DO-203AB (DO-5) | DO-4 (DO-203AA) |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AA, DO-4, Stud |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | 40A | 35A | 6A |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | 10 µA @ 1000 V | 10 µA @ 800 V | 15 µA @ 50 V |
| Package protegéieren | Bulk | Box | Bulk | Bulk |
| Capacitance @ Vr, F. | - | - | - | 115pF @ 10V, 1MHz |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 35 A | 1.19 V @ 90 A | 1.4 V @ 110 A | 1.4 V @ 20 A |
| Technologie | Standard | Standard | Standard | Standard |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Basis Produktnummer | 1N3767 | - | 1N3766 | 1N3879 |
Eroflueden 1N3767 PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N3767 - GeneSiC Semiconductor.
1N3768Solid State Inc.DIODE GEN PURP 1KV 40A DO51N3766Microchip TechnologySTANDARD RECTIFIER1N3766AMSCIGBT Module1N3768AMSCIGBT Module1N3879Microchip TechnologyFAST RECOVERY RECTIFIER1N3766RSolid State Inc.DIODE GEN PURP REV 800V 40A DO51N3767Solid State Inc.DIODE GEN PURP 900V 40A DO5
1N3766RGeneSiC SemiconductorDIODE GEN PURP REV 800V 35A DO51N3768RSolid State Inc.DIODE GEN PURP REV 1KV 40A DO51N3766Solid State Inc.DIODE GEN PURP 800V 40A DO51N3768Microchip TechnologySTANDARD RECTIFIER1N3766GeneSiC SemiconductorDIODE GEN PURP 800V 35A DO51N3768RGeneSiC SemiconductorDIODE GEN PURP REV 1KV 35A DO51N3768GeneSiC SemiconductorDIODE GEN PURP 1KV 35A DO5
1N3821AAmphenol SSI Technologies1N3767Microchip TechnologySTANDARD RECTIFIER1N3768RMicrochip TechnologySTANDARD RECTIFIER1N3766RMicrochip TechnologySTANDARD RECTIFIER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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