1N3766R Tech Spezifikatioune
GeneSiC Semiconductor - 1N3766R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N3766R
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 35 A | |
| Voltage - DC Reverse (Vr) (Max) | 800 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AB, DO-5, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N3766R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N3766R.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 1N3766R | 1N3766R | 1N3765R | 1N3767 |
| Hiersteller | GeneSiC Semiconductor | Microchip Technology | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Basis Produktnummer | 1N3766R | 1N3766 | 1N3765R | 1N3767 |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Chassis, Stud Mount | Chassis, Stud Mount |
| Technologie | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | -65°C ~ 175°C | -65°C ~ 190°C | -65°C ~ 190°C |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | 10 µA @ 800 V | 10 µA @ 50 V | 10 µA @ 50 V |
| Supplier Device Package | DO-5 | DO-203AB (DO-5) | DO-5 | DO-5 |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 35 A | 1.4 V @ 110 A | 1.2 V @ 35 A | 1.2 V @ 35 A |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 800 V | 800 V | 700 V | 900 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | 35A | 35A | 35A |
Eroflueden 1N3766R PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N3766R - GeneSiC Semiconductor.
1N3766RMicrochip TechnologySTANDARD RECTIFIER1N3765RGeneSiC SemiconductorDIODE GEN PURP REV 700V 35A DO51N3767GeneSiC SemiconductorDIODE GEN PURP 900V 35A DO51N3767Microchip TechnologySTANDARD RECTIFIER
1N3766RSolid State Inc.DIODE GEN PURP REV 800V 40A DO51N3768RMicrochip TechnologySTANDARD RECTIFIER1N3767Solid State Inc.DIODE GEN PURP 900V 40A DO51N3765AMSCIGBT Module1N3768AMSCIGBT Module1N3766Microchip TechnologySTANDARD RECTIFIER1N3768Solid State Inc.DIODE GEN PURP 1KV 40A DO51N3768Microchip TechnologySTANDARD RECTIFIER1N3765RSolid State Inc.DIODE GEN PURP REV 700V 40A DO51N3765RMicrochip TechnologyDIODE GEN PURP 700V 35A DO51N3766GeneSiC SemiconductorDIODE GEN PURP 800V 35A DO51N3768GeneSiC SemiconductorDIODE GEN PURP 1KV 35A DO51N3766Solid State Inc.DIODE GEN PURP 800V 40A DO51N3766AMSCIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.