STP17NF25 Tech Spezifikatioune
STMicroelectronics - STP17NF25 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP17NF25
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | STripFET™ II | |
Rds On (Max) @ Id, Vgs | 165mOhm @ 8.5A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | STP17 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP17NF25.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP17NF25 | STP17NK40Z | STP16NK65Z | STP180N4F6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Rds On (Max) @ Id, Vgs | 165mOhm @ 8.5A, 10V | 250mOhm @ 7.5A, 10V | 500mOhm @ 6.5A, 10V | - |
Serie | STripFET™ II | SuperMESH™ | SuperMESH™ | STripFET™ F6 |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Basis Produktnummer | STP17 | STP17N | STP16N | STP180 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Vgs (Max) | ±20V | ±30V | ±30V | ±20V |
Entworf fir Source Voltage (Vdss) | 250 V | 400 V | 650 V | 40 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 10 V | 65 nC @ 10 V | 89 nC @ 10 V | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 100µA | 4.5V @ 100µA | - |
Power Dissipation (Max) | 90W (Tc) | 150W (Tc) | 190W (Tc) | 190W (Tc) |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V | 1900 pF @ 25 V | 2750 pF @ 25 V | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 15A (Tc) | 13A (Tc) | 120A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden STP17NF25 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP17NF25 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.