STP16NS25 Tech Spezifikatioune
STMicroelectronics - STP16NS25 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP16NS25
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | MESH OVERLAY™ | |
Rds On (Max) @ Id, Vgs | 280mOhm @ 8A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
Basis Produktnummer | STP16N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP16NS25.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP16NS25 | STP16NF06L | STP16NS25FP | STP16NK65Z |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Feature | - | - | - | - |
Operatioun Temperatur | -65°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | MESH OVERLAY™ | STripFET™ II | MESH OVERLAY™ | SuperMESH™ |
Power Dissipation (Max) | 140W (Tc) | 45W (Tc) | 40W (Tc) | 190W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V, 5V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 280mOhm @ 8A, 10V | 90mOhm @ 8A, 10V | 280mOhm @ 8A, 10V | 500mOhm @ 6.5A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220 | TO-220 | TO-220FP | TO-220 |
Entworf fir Source Voltage (Vdss) | 250 V | 60 V | 250 V | 650 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±20V | ±16V | ±20V | ±30V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 4.5V @ 100µA |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 Full Pack | TO-220-3 |
Basis Produktnummer | STP16N | STP16 | STP16N | STP16N |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 16A (Tc) | 16A (Tc) | 13A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V | 10 nC @ 5 V | 83 nC @ 10 V | 89 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V | 345 pF @ 25 V | 1270 pF @ 25 V | 2750 pF @ 25 V |
Eroflueden STP16NS25 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP16NS25 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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