STP180N10F3 Tech Spezifikatioune
STMicroelectronics - STP180N10F3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP180N10F3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | STripFET™ III | |
Rds On (Max) @ Id, Vgs | 5.1mOhm @ 60A, 10V | |
Power Dissipation (Max) | 315W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6665 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 114.6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | STP180 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP180N10F3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP180N10F3 | STP17N80K5 | STP180N4F6 | STP18N60DM2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Power Dissipation (Max) | 315W (Tc) | 170W (Tc) | 190W (Tc) | 90W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | - | 5V @ 250µA |
Vgs (Max) | ±20V | ±30V | ±20V | ±25V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 114.6 nC @ 10 V | 26 nC @ 10 V | - | 20 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | - | 150°C (TJ) |
Serie | STripFET™ III | MDmesh™ K5 | STripFET™ F6 | MDmesh™ DM2 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 14A (Tc) | 120A (Tc) | 12A (Tc) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 800 V | 40 V | 600 V |
Input Capacitance (Ciss) (Max) @ Vds | 6665 pF @ 25 V | 866 pF @ 100 V | - | 800 pF @ 100 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
Basis Produktnummer | STP180 | STP17 | STP180 | STP18 |
Rds On (Max) @ Id, Vgs | 5.1mOhm @ 60A, 10V | 340mOhm @ 7A, 10V | - | 295mOhm @ 6A, 10V |
Eroflueden STP180N10F3 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP180N10F3 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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