PMV130ENEAR Tech Spezifikatioune
Nexperia USA Inc. - PMV130ENEAR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PMV130ENEAR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Nexperia | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-236AB | |
Serie | Automotive, AEC-Q100 | |
Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 10V | |
Power Dissipation (Max) | 460mW (Ta), 5W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.1A (Ta) | |
Basis Produktnummer | PMV130 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PMV130ENEAR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | PMV130ENEAR | PMV160UP,215 | PMV117EN,215 | PMV130ENEAR |
Hiersteller | Nexperia USA Inc. | NXP USA Inc. | NXP USA Inc. | NXP Semiconductors |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 1.8V, 4.5V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | TO-236AB | SOT-23 | SOT-23 (TO-236AB) | TO-236AB |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Bulk |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 10V | 210mOhm @ 1.2A, 4.5V | 117mOhm @ 500mA, 10V | 120mOhm @ 1.5A, 10V |
Serie | Automotive, AEC-Q100 | - | TrenchMOS™ | - |
Basis Produktnummer | PMV130 | - | PMV1 | - |
Vgs (Max) | ±20V | ±8V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 20 V | 365 pF @ 10 V | 147 pF @ 10 V | 170 pF @ 20 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 10 V | 4 nC @ 4.5 V | 4.6 nC @ 10 V | 3.6 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 40 V | 20 V | 30 V | 40 V |
Power Dissipation (Max) | 460mW (Ta), 5W (Tc) | 335mW (Ta), 2.17W (Tc) | 830mW (Tc) | 460mW (Ta), 5W (Tc) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 950mV @ 250µA | 2V @ 1mA | 2.5V @ 250µA |
FET Feature | - | - | - | - |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.1A (Ta) | 1.2A (Ta) | 2.5A (Tc) | 2.1A (Ta) |
Eroflueden PMV130ENEAR PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PMV130ENEAR - Nexperia USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.