PMV160UP,215 Tech Spezifikatioune
NXP USA Inc. - PMV160UP,215 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMV160UP,215
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 950mV @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 210mOhm @ 1.2A, 4.5V | |
Power Dissipation (Max) | 335mW (Ta), 2.17W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMV160UP,215.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | PMV160UP,215 | PMV160UP,215 | PMV117EN,215 | PMV164ENEAR |
Hiersteller | NXP USA Inc. | Nexperia USA Inc. | NXP USA Inc. | Nexperia USA Inc. |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 335mW (Ta), 2.17W (Tc) | 335mW (Ta), 2.17W (Tc) | 830mW (Tc) | 640mW (Ta), 5.8W (Tc) |
Vgs (Max) | ±8V | ±8V | ±20V | ±20V |
Supplier Device Package | SOT-23 | TO-236AB | SOT-23 (TO-236AB) | TO-236AB |
Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V | 4 nC @ 4.5 V | 4.6 nC @ 10 V | 3.8 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 60 V |
Rds On (Max) @ Id, Vgs | 210mOhm @ 1.2A, 4.5V | 210mOhm @ 1.2A, 4.5V | 117mOhm @ 500mA, 10V | 218mOhm @ 1.6A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 10 V | 365 pF @ 10 V | 147 pF @ 10 V | 110 pF @ 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) | 1.2A (Ta) | 2.5A (Tc) | 1.6A (Ta) |
FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 950mV @ 250µA | 950mV @ 250µA | 2V @ 1mA | 2.7V @ 250µA |
FET Feature | - | - | - | - |
Serie | - | - | TrenchMOS™ | Automotive, AEC-Q101 |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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