PMV120ENEAR Tech Spezifikatioune
Nexperia USA Inc. - PMV120ENEAR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PMV120ENEAR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 2.7V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-236AB | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 2.1A, 10V | |
| Power Dissipation (Max) | 513mW (Ta), 6.4W (Tc) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.1A (Ta) | |
| Basis Produktnummer | PMV120 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PMV120ENEAR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PMV120ENEAR | PMV130ENEAR | PMV160UP,215 | PMV130ENEAR |
| Hiersteller | Nexperia USA Inc. | NXP Semiconductors | Nexperia USA Inc. | Nexperia USA Inc. |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Vgs (th) (Max) @ Id | 2.7V @ 250µA | 2.5V @ 250µA | 950mV @ 250µA | 2.5V @ 250µA |
| Supplier Device Package | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 30 V | 170 pF @ 20 V | 365 pF @ 10 V | 170 pF @ 20 V |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.1A (Ta) | 2.1A (Ta) | 1.2A (Ta) | 2.1A (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 1.8V, 4.5V | 4.5V, 10V |
| Vgs (Max) | ±20V | ±20V | ±8V | ±20V |
| Serie | Automotive, AEC-Q101 | - | - | Automotive, AEC-Q100 |
| Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 20 V | 40 V |
| Basis Produktnummer | PMV120 | - | PMV160 | PMV130 |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V | 3.6 nC @ 10 V | 4 nC @ 4.5 V | 3.6 nC @ 10 V |
| Power Dissipation (Max) | 513mW (Ta), 6.4W (Tc) | 460mW (Ta), 5W (Tc) | 335mW (Ta), 2.17W (Tc) | 460mW (Ta), 5W (Tc) |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 2.1A, 10V | 120mOhm @ 1.5A, 10V | 210mOhm @ 1.2A, 4.5V | 120mOhm @ 1.5A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden PMV120ENEAR PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PMV120ENEAR - Nexperia USA Inc..
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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