PHC21025,118 Tech Spezifikatioune
Nexperia USA Inc. - PHC21025,118 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PHC21025,118
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A, 2.3A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | PHC21025 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PHC21025,118.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PHC21025,118 | FDG6313N | SI7942DP-T1-E3 | AO4826 |
| Hiersteller | Nexperia USA Inc. | onsemi | Vishay Siliconix | Alpha & Omega Semiconductor Inc. |
| Serie | - | - | TrenchFET® | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A, 2.3A | 500mA | 3.8A | - |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | PHC21025 | FDG6313 | SI7942 | AO482 |
| Supplier Device Package | 8-SO | SC-88 (SC-70-6) | PowerPAK® SO-8 Dual | 8-SOIC |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V | 50pF @ 10V | - | 2300pF @ 30V |
| Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | 2W | 300mW | 1.4W | 2W |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | 2.3nC @ 4.5V | 24nC @ 10V | 58nC @ 10V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 6-TSSOP, SC-88, SOT-363 | PowerPAK® SO-8 Dual | 8-SOIC (0.154", 3.90mm Width) |
| Konfiguratioun | N and P-Channel | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | 450mOhm @ 500mA, 4.5V | 49mOhm @ 5.9A, 10V | 25mOhm @ 6.3A, 10V |
| Entworf fir Source Voltage (Vdss) | 30V | 25V | 100V | 60V |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA | 1.5V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Eroflueden PHC21025,118 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PHC21025,118 - Nexperia USA Inc..
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AO6801AAlpha & Omega Semiconductor Inc.MOSFET 2P-CH 30V 2.3A 6TSOP
IRF7314QTRPBFInfineon TechnologiesMOSFET 2P-CH 20V 5.2A 8SOICIRF7317PBFInfineon TechnologiesMOSFET N/P-CH 20V 8-SOIC
UPA2790GR-E1-ATRenesasUPA2790 - N- AND P-CHANNEL POWER
FDC6401NonsemiMOSFET 2N-CH 20V 3A SSOT-6PHC21025LUMILEDSEFC2K102ANUZTDGonsemiNCH 12V 33A WLCSP DUALSIA923EDJ-T1-GE3Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC-70-6
TSM2537CQ RFGTaiwan Semiconductor CorporationMOSFET N/P-CH 20V 11.6A/9A 6TDFN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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