FDC6401N Tech Spezifikatioune
onsemi - FDC6401N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDC6401N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SuperSOT™-6 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V | |
| Power - Max | 700mW | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FDC6401 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDC6401N.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | FDC6401N | FDC6420C | FDC640P | FDC6420 |
| Hiersteller | onsemi | onsemi | onsemi | MI |
| Konfiguratioun | 2 N-Channel (Dual) | N and P-Channel | - | - |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Basis Produktnummer | FDC6401 | FDC6420 | FDC640 | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V | 4.6nC @ 4.5V | 13 nC @ 4.5 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A | 3A, 2.2A | 4.5A (Ta) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Supplier Device Package | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 | - |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | - |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V | 70mOhm @ 3A, 4.5V | 53mOhm @ 4.5A, 4.5V | - |
| Power - Max | 700mW | 700mW | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | 20 V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 10V | 324pF @ 10V | 890 pF @ 10 V | - |
| FET Feature | - | Logic Level Gate | - | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | - |
Eroflueden FDC6401N PDF DataDhusts an onsemi Dokumentatioun fir FDC6401N - onsemi.
FDC640PonsemiMOSFET P-CH 20V 4.5A SUPERSOT6FDC6420MI
FDC638P_GFairchild (onsemi)FDC6392SFairchild Semiconductor2.2A, 20V, P-CHANNEL, MOSFETFDC6420ConsemiMOSFET N/P-CH 20V 3A/2.2A SSOT-6FDC6392S MOSFairchild (onsemi)FDC6392SonsemiMOSFET P-CH 20V 2.2A SUPERSOT6FDC642PonsemiMOSFET P-CH 20V 4A SUPERSOT6FDC638P_NLFairchild (onsemi)FDC638PFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDC638P-NLFairchild (onsemi)FDC642PFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDC640P-NLFairchild (onsemi)FDC6420C-NLVBSEMIFDC6420C_NLAMI Semiconductor/onsemiFDC640P MOSFairchild (onsemi)FDC638P MOSFairchild (onsemi)FDC638PonsemiMOSFET P-CH 20V 4.5A SUPERSOT6| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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