FDG6313N Tech Spezifikatioune
onsemi - FDG6313N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDG6313N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-88 (SC-70-6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | |
| Power - Max | 300mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 25V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FDG6313 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDG6313N.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FDG6313N | FDG6304P | FDG6314P | FDG6316P |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | 1.5nC @ 4.5V | - | 2.4nC @ 4.5V |
| Entworf fir Source Voltage (Vdss) | 25V | 25V | 25V | 12V |
| Serie | - | - | - | PowerTrench® |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | 62pF @ 10V | - | 146pF @ 6V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power - Max | 300mW | 300mW | - | 300mW |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | 1.1Ohm @ 410mA, 4.5V | - | 270mOhm @ 700mA, 4.5V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate | Logic Level Gate | - | Logic Level Gate |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA | 410mA | - | 700mA |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | - | 1.5V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | SC-88 (SC-70-6) | SC-88 (SC-70-6) | SC-88 (SC-70-6) | SC-88 (SC-70-6) |
| Basis Produktnummer | FDG6313 | FDG6304 | FDG6314 | FDG6316 |
Eroflueden FDG6313N PDF DataDhusts an onsemi Dokumentatioun fir FDG6313N - onsemi.
FDG6306P-NLFairchild (onsemi)FDG6304PonsemiMOSFET 2P-CH 25V 0.41A SC70-6FDG6314PonsemiMOSFET 2P-CH 25V SC70-6FDG6308P MOSFairchild (onsemi)FDG6316P MOSFairchild (onsemi)FDG6304P MOSFairchild (onsemi)FDG6316PonsemiMOSFET 2P-CH 12V 0.7A SC70-6FDG6313N-NLFairchild (onsemi)FDG6317NZonsemiMOSFET 2N-CH 20V 0.7A SC70-6FDG6313NFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDG6306P MOSFairchild (onsemi)FDG6313N/NLFairchild (onsemi)FDG6308P-NLFairchild (onsemi)FDG6313N MOSFairchild (onsemi)FDG6304P-NLFairchild (onsemi)FDG6308PonsemiMOSFET 2P-CH 20V 600MA SC88
FDG6316P-NLAMI Semiconductor/onsemiFDG6306PonsemiMOSFET 2P-CH 20V 600MA SC88| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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