CSD19532Q5BT Tech Spezifikatioune
Texas Instruments - CSD19532Q5BT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD19532Q5BT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 3.2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-VSON-CLIP (5x6) | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V | |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | |
| Basis Produktnummer | CSD19532 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD19532Q5BT.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | CSD19532Q5BT | CSD19506KCS | CSD19505KTT | CSD19535KCS |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package / Case | 8-PowerTDFN | TO-220-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-220-3 |
| Vgs (th) (Max) @ Id | 3.2V @ 250µA | 3.2V @ 250µA | 3.2V @ 250µA | 3.4V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Basis Produktnummer | CSD19532 | CSD19506 | CSD19505 | CSD19535 |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
| Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) | 375W (Tc) | 300W (Tc) | 300W (Tc) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | 156 nC @ 10 V | 76 nC @ 10 V | 101 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V | 2.3mOhm @ 100A, 10V | 3.1mOhm @ 100A, 10V | 3.6mOhm @ 100A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 50 V | 12200 pF @ 40 V | 7920 pF @ 40 V | 7930 pF @ 50 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 100 V | 80 V | 80 V | 100 V |
| Supplier Device Package | 8-VSON-CLIP (5x6) | TO-220-3 | DDPAK/TO-263-3 | TO-220-3 |
| Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | 100A (Ta) | 200A (Ta) | 150A (Ta) |
Eroflueden CSD19532Q5BT PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD19532Q5BT - Texas Instruments.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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