CSD19532Q5B Tech Spezifikatioune
Texas Instruments - CSD19532Q5B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD19532Q5B
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Texas Instruments | |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-VSON-CLIP (5x6) | |
Serie | NexFET™ | |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V | |
Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | |
Basis Produktnummer | CSD19532 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Affected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | CSD19532Q5B | CSD19534KCS | CSD19531KCS | CSD19533Q5A |
Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-PowerTDFN | TO-220-3 | TO-220-3 | 8-PowerTDFN |
Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | 3.4V @ 250µA | 3.3V @ 250µA | 3.4V @ 250µA |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | 22.2 nC @ 10 V | 38 nC @ 10 V | 35 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V | 16.5mOhm @ 30A, 10V | 7.7mOhm @ 60A, 10V | 9.4mOhm @ 13A, 10V |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) | 118W (Tc) | 214W (Tc) | 3.2W (Ta), 96W (Tc) |
FET Feature | - | - | - | - |
Supplier Device Package | 8-VSON-CLIP (5x6) | TO-220-3 | TO-220-3 | 8-VSONP (5x6) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | 100A (Ta) | 100A (Ta) | 100A (Ta) |
Basis Produktnummer | CSD19532 | CSD19534 | CSD19531 | CSD19533 |
Serie | NexFET™ | - | NexFET™ | NexFET™ |
Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 50 V | 1670 pF @ 50 V | 3870 pF @ 50 V | 2670 pF @ 50 V |
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Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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