CSD19506KCS Tech Spezifikatioune
Texas Instruments - CSD19506KCS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD19506KCS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Texas Instruments | |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | NexFET™ | |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | |
Basis Produktnummer | CSD19506 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD19506KCS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | CSD19506KCS | CSD19501KCS | CSD19505KCS | CSD19532Q5BT |
Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 80 V | 100 V |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | 100A (Ta) | 150A (Ta) | 100A (Ta) |
Basis Produktnummer | CSD19506 | CSD19501 | CSD19505 | CSD19532 |
Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V | 50 nC @ 10 V | 76 nC @ 10 V | 62 nC @ 10 V |
Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | 3.2V @ 250µA | 3.2V @ 250µA | 3.2V @ 250µA |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | 8-PowerTDFN |
Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 40 V | 3980 pF @ 40 V | 7820 pF @ 40 V | 4810 pF @ 50 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 375W (Tc) | 217W (Tc) | 300W (Tc) | 3.1W (Ta), 195W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | 6.6mOhm @ 60A, 10V | 3.8mOhm @ 100A, 6V | 4.9mOhm @ 17A, 10V |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | 8-VSON-CLIP (5x6) |
Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
Eroflueden CSD19506KCS PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD19506KCS - Texas Instruments.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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