RRQ030P03TR Tech Spezifikatioune
Rohm Semiconductor - RRQ030P03TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RRQ030P03TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSMT6 (SC-95) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | |
Power Dissipation (Max) | 600mW (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | |
Basis Produktnummer | RRQ030 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RRQ030P03TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RRQ030P03TR | STD4NK80ZT4 | SPP80N06S2L-07 | MTM232230LBF |
Hiersteller | Rohm Semiconductor | STMicroelectronics | Infineon Technologies | Panasonic Electronic Components |
Serie | - | SuperMESH™ | OptiMOS™ | - |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 10V | 4.5V, 10V | 2.5V, 4.5V |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TSMT6 (SC-95) | DPAK | PG-TO220-3-1 | SMini3-G1-B |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | 3.5Ohm @ 1.5A, 10V | 7mOhm @ 60A, 10V | 28mOhm @ 1A, 4V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V | 575 pF @ 25 V | 4210 pF @ 25 V | 1200 pF @ 10 V |
Entworf fir Source Voltage (Vdss) | 30 V | 800 V | 55 V | 20 V |
Basis Produktnummer | RRQ030 | STD4NK80 | SPP80N | - |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | 3A (Tc) | 80A (Tc) | 4.5A (Ta) |
Power Dissipation (Max) | 600mW (Ta) | 80W (Tc) | 210W (Tc) | 500mW (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 22.5 nC @ 10 V | 130 nC @ 10 V | - |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | SC-70, SOT-323 |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 4.5V @ 50µA | 2V @ 150µA | 1.3V @ 1mA |
Vgs (Max) | ±20V | ±30V | ±20V | ±10V |
Eroflueden RRQ030P03TR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RRQ030P03TR - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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