HUF75309D3ST Tech Spezifikatioune
onsemi - HUF75309D3ST technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HUF75309D3ST
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | UltraFET™ | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V | |
Power Dissipation (Max) | 55W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) | |
Basis Produktnummer | HUF75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HUF75309D3ST.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUF75309D3ST | HUF75309P3 | HUF75307T3ST | HUF75321D3ST |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 350 pF @ 25 V | 250 pF @ 25 V | 680 pF @ 25 V |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V | 70mOhm @ 19A, 10V | 90mOhm @ 2.6A, 10V | 36mOhm @ 20A, 10V |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Bulk |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Basis Produktnummer | HUF75 | - | HUF75 | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 55W (Tc) | 55W (Tc) | 1.1W (Ta) | 93W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | TO-261-4, TO-261AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Serie | UltraFET™ | UltraFET™ | - | UltraFET™ |
Supplier Device Package | TO-252AA | TO-220-3 | SOT-223-4 | TO-252, (D-Pak) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) | 19A (Tc) | 2.6A (Ta) | 20A (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V | 24 nC @ 20 V | 17 nC @ 20 V | 44 nC @ 20 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden HUF75309D3ST PDF DataDhusts an onsemi Dokumentatioun fir HUF75309D3ST - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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