RRQ020P03TCR Tech Spezifikatioune
Rohm Semiconductor - RRQ020P03TCR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RRQ020P03TCR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSMT6 (SC-95) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 2A, 10V | |
Power Dissipation (Max) | 1.25W (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
Basis Produktnummer | RRQ020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RRQ020P03TCR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RRQ020P03TCR | HAT2169H-EL-E | FDP040N06 | RRQ045P03TR |
Hiersteller | Rohm Semiconductor | Renesas Electronics America Inc | onsemi | Rohm Semiconductor |
Power Dissipation (Max) | 1.25W (Ta) | 30W (Tc) | 231W (Tc) | 600mW (Ta) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | 40 V | 60 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V | 6650 pF @ 10 V | 8235 pF @ 25 V | 1350 pF @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) |
Serie | - | - | PowerTrench® | - |
Supplier Device Package | TSMT6 (SC-95) | LFPAK | TO-220-3 | TSMT6 (SC-95) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 50A (Ta) | 120A (Tc) | 4.5A (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 5 V | 45 nC @ 4.5 V | 133 nC @ 10 V | 14 nC @ 5 V |
Basis Produktnummer | RRQ020 | HAT2169 | FDP040 | RRQ045 |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 4.5V @ 250µA | 2.5V @ 1mA |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4.5V, 10V | 10V | 4V, 10V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SC-100, SOT-669 | TO-220-3 | SOT-23-6 Thin, TSOT-23-6 |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
Rds On (Max) @ Id, Vgs | 160mOhm @ 2A, 10V | 3.5mOhm @ 25A, 10V | 4mOhm @ 75A, 10V | 35mOhm @ 4.5A, 10V |
Eroflueden RRQ020P03TCR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RRQ020P03TCR - Rohm Semiconductor.
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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