2SJ328-Z-E1-AZ Tech Spezifikatioune
Renesas - 2SJ328-Z-E1-AZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas - 2SJ328-Z-E1-AZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Vgs (th) (Max) @ Id | 2V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220SMD | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 1.5W (Ta), 75W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas 2SJ328-Z-E1-AZ.
| Produktiounsattriff |  |
 |
|
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|---|---|---|---|---|
| Part Number | 2SJ328-Z-E1-AZ | 2SJ326-AZ | 2SJ328-AZ | 2SJ330-AZ |
| Hiersteller | Renesas | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Vgs (th) (Max) @ Id | 2V @ 1mA | - | - | - |
| Mounting Type | Surface Mount | - | - | - |
| Power Dissipation (Max) | 1.5W (Ta), 75W (Tc) | - | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | - | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Supplier Device Package | TO-220SMD | - | - | - |
| Operatioun Temperatur | 150°C | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | - | - | - |
| Vgs (Max) | ±20V | - | - | - |
| FET Feature | - | - | - | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) | - | - | - |
| FET Typ | P-Channel | - | - | - |
| Serie | - | * | * | * |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V | - | - | - |
2SJ327VBsemi
2SJ330 J330Fairchild (onsemi)
2SJ332-6AMI Semiconductor/onsemi2SJ328AZNEC2SJ327-Z-E1Renesas Electronics Corporation2SJ327-Z-E1-AZVBsemi2SJ326-AZRenesas Electronics America IncP-CHANNEL SMALL SIGNAL MOSFET2SJ333STLHITACHI2SJ332AMI Semiconductor/onsemi2SJ333HIT2SJ328-AZRenesas Electronics America IncP-CHANNEL POWER MOSFET2SJ327-Z-E2VBsemi2SJ329 J329NEC2SJ328-Z-E1NEC2SJ327 J327Renesas Electronics Corporation2SJ328-Z-E2NEC2SJ330-AZRenesas Electronics America IncP-CHANNEL POWER MOSFET2SJ327-ZVBsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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