RFN5B2STL Tech Spezifikatioune
Rohm Semiconductor - RFN5B2STL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RFN5B2STL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 980 mV @ 5 A | |
| Technologie | Standard | |
| Supplier Device Package | CPD | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 25 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 5A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RFN5B2STL.
| Produktiounsattriff |  |
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 |
 |
|---|---|---|---|---|
| Part Number | RFN5B2STL | RFNL10TJ6SGC9 | RFN2L6STE25 | RFN5B6STL |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
| Voltage - Viru (Vf) (Max) @ Wann | 980 mV @ 5 A | 1.3 V @ 10 A | 1.55 V @ 1.5 A | 1.55 V @ 5 A |
| Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | CPD | TO-220ACFP | PMDS | CPD |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-2 | DO-214AC, SMA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operatiounstemperatur - Junction | 150°C | 150°C (Max) | 150°C (Max) | 150°C (Max) |
| Capacitance @ Vr, F. | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
| Reverse Recovery Time (trr) | 25 ns | 150 ns | 35 ns | 50 ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 5A | 10A | 1.5A | 5A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 600 V | 1 µA @ 600 V | 10 µA @ 600 V |
Eroflueden RFN5B2STL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RFN5B2STL - Rohm Semiconductor.
RFNL10TJ6SGC9Rohm SemiconductorDIODE GP 600V 10A TO220ACFPRFN5B3SLAPIS TechnologyRFN5BM3S FHHTLLAPIS TechnologyRFN30TS6DGC11Rohm SemiconductorDIODE ARRAY GP 600V 15A TO247RFNL10TJ6SLAPIS TechnologyRFNL10BM6STLLAPIS TechnologyRFN2L6STE25Rohm SemiconductorDIODE GEN PURP 600V 1.5A PMDSRFN30TS6SGLAPIS TechnologyRFN5B6STLRohm SemiconductorDIODE GEN PURP 600V 5A CPDRFN3BM2STLRohm SemiconductorDIODE GEN PURP 200V 3A TO252RFN3BGE6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252RFN2L4STE25Rohm SemiconductorDIODE GEN PURP 400V 1.5A PMDS
RFND4-31GFMITELRFN3BM6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252
RFN2LAM6STFTRRohm SemiconductorDIODE GEN PURP 600V 1.5A PMDTMRFN5BM3STLRohm SemiconductorDIODE GEN PURP 350V 5A TO252RFN2L6S-TE25LAPIS TechnologyRFN5BM6STLRohm SemiconductorDIODE GEN PURP 600V 5A TO252| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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