RFN3BM2STL Tech Spezifikatioune
Rohm Semiconductor - RFN3BM2STL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RFN3BM2STL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 980 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-252 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 25 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | RFN3BM2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RFN3BM2STL.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RFN3BM2STL | RFN3BM6STL | RFN2L4STE25 | RFN5B2STL |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Serie | - | - | - | - |
| Basis Produktnummer | RFN3BM2 | RFN3B | RFN2L4 | - |
| Capacitance @ Vr, F. | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 600 V | 1 µA @ 400 V | 10 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 600 V | 400 V | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | DO-214AC, SMA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Reverse Recovery Time (trr) | 25 ns | 30 ns | 30 ns | 25 ns |
| Operatiounstemperatur - Junction | 150°C | 150°C (Max) | 150°C (Max) | 150°C |
| Supplier Device Package | TO-252 | TO-252 | PMDS | CPD |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 1.5A | 5A |
| Voltage - Viru (Vf) (Max) @ Wann | 980 mV @ 3 A | 1.55 V @ 3 A | 1.2 V @ 1.5 A | 980 mV @ 5 A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Eroflueden RFN3BM2STL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RFN3BM2STL - Rohm Semiconductor.
RFN3BM6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252
RFN5BM3S FHHTLLAPIS TechnologyRFN30TS6DGC11Rohm SemiconductorDIODE ARRAY GP 600V 15A TO247RFN2L4STE25Rohm SemiconductorDIODE GEN PURP 400V 1.5A PMDSRFN5B2STLRohm SemiconductorDIODE GEN PURP 5A CPDRFN5BM3STLRohm SemiconductorDIODE GEN PURP 350V 5A TO252
RFN2LAM6STFTRRohm SemiconductorDIODE GEN PURP 600V 1.5A PMDTMRFNL10BM6STLLAPIS TechnologyRFN5B6STLRohm SemiconductorDIODE GEN PURP 600V 5A CPDRFN5BM6STLRohm SemiconductorDIODE GEN PURP 600V 5A TO252RFN2L6S-TE25LAPIS TechnologyRFN5B3SLAPIS TechnologyRFN3BGE6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252RFN2L4SFJ-TE25LAPIS TechnologyRFN2L4S-TE25LAPIS Technology
RFND4-31GFMITELRFN2L6STE25Rohm SemiconductorDIODE GEN PURP 600V 1.5A PMDSRFN30TS6SGLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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