RFN3BM6STL Tech Spezifikatioune
Rohm Semiconductor - RFN3BM6STL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RFN3BM6STL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.55 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-252 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 30 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 150°C (Max) | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | RFN3B |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RFN3BM6STL.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | RFN3BM6STL | RFN5B2STL | RFN5B6STL | RFN2L6STE25 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | DO-214AC, SMA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 200 V | 10 µA @ 600 V | 1 µA @ 600 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.55 V @ 3 A | 980 mV @ 5 A | 1.55 V @ 5 A | 1.55 V @ 1.5 A |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 5A | 5A | 1.5A |
| Serie | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatiounstemperatur - Junction | 150°C (Max) | 150°C | 150°C (Max) | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 600 V | - | 600 V | 600 V |
| Technologie | Standard | Standard | Standard | Standard |
| Basis Produktnummer | RFN3B | - | RFN5B | RFN2L6 |
| Supplier Device Package | TO-252 | CPD | CPD | PMDS |
| Reverse Recovery Time (trr) | 30 ns | 25 ns | 50 ns | 35 ns |
Eroflueden RFN3BM6STL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RFN3BM6STL - Rohm Semiconductor.
RFND4-31GFMITEL
RFN5B3SLAPIS TechnologyRFNL10TJ6SLAPIS TechnologyRFNL10BM6STLLAPIS TechnologyRFN5B2STLRohm SemiconductorDIODE GEN PURP 5A CPDRFN5B6STLRohm SemiconductorDIODE GEN PURP 600V 5A CPDRFN2L6STE25Rohm SemiconductorDIODE GEN PURP 600V 1.5A PMDS
RFN2LAM6STFTRRohm SemiconductorDIODE GEN PURP 600V 1.5A PMDTMRFN2L4SFJ-TE25LAPIS TechnologyRFN30TS6SGLAPIS TechnologyRFN3BM2STLRohm SemiconductorDIODE GEN PURP 200V 3A TO252RFN5BM3S FHHTLLAPIS TechnologyRFN2L6S-TE25LAPIS TechnologyRFN30TS6DGC11Rohm SemiconductorDIODE ARRAY GP 600V 15A TO247RFN3BGE6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252RFN2L4STE25Rohm SemiconductorDIODE GEN PURP 400V 1.5A PMDSRFN5BM3STLRohm SemiconductorDIODE GEN PURP 350V 5A TO252RFN5BM6STLRohm SemiconductorDIODE GEN PURP 600V 5A TO252| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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