RCX160N20 Tech Spezifikatioune
Rohm Semiconductor - RCX160N20 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RCX160N20
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 5.25V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 180mOhm @ 8A, 10V | |
Power Dissipation (Max) | 2.23W (Ta), 40W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
Basis Produktnummer | RCX160 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RCX160N20.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RCX160N20 | HUF76609D3ST | APT66M60L | IRFR3704TR |
Hiersteller | Rohm Semiconductor | onsemi | Microchip Technology | Infineon Technologies |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Serie | - | UltraFET™ | POWER MOS 8™ | HEXFET® |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | 16 nC @ 10 V | 330 nC @ 10 V | 19 nC @ 4.5 V |
Basis Produktnummer | RCX160 | HUF76609 | APT66M60 | - |
Supplier Device Package | TO-220FM | TO-252AA | TO-264 [L] | D-Pak |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 10A (Tc) | 70A (Tc) | 75A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 180mOhm @ 8A, 10V | 160mOhm @ 10A, 10V | 190mOhm @ 33A, 10V | 9.5mOhm @ 15A, 10V |
Package / Case | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-264-3, TO-264AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V | 425 pF @ 25 V | 13190 pF @ 25 V | 1996 pF @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 200 V | 100 V | 600 V | 20 V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Vgs (Max) | ±30V | ±16V | ±30V | ±20V |
Power Dissipation (Max) | 2.23W (Ta), 40W (Tc) | 49W (Tc) | 1135W (Tc) | 90W (Tc) |
Vgs (th) (Max) @ Id | 5.25V @ 1mA | 3V @ 250µA | 5V @ 2.5mA | 3V @ 250µA |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden RCX160N20 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RCX160N20 - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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