APT77N60JC3 Tech Spezifikatioune
Microchip Technology - APT77N60JC3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT77N60JC3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 3.9V @ 5.4mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ISOTOP® | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 60A, 10V | |
| Power Dissipation (Max) | 568W (Tc) | |
| Package / Case | SOT-227-4, miniBLOC | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 640 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 77A (Tc) | |
| Basis Produktnummer | APT77N60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT77N60JC3.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | APT77N60JC3 | APT75M50B2 | APT75M50L | APT77N60JC |
| Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | Microsemi |
| Package protegéieren | Tube | Tube | Tube | - |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V | 11600 pF @ 25 V | 11600 pF @ 25 V | - |
| Vgs (Max) | ±20V | ±30V | ±30V | - |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 640 nC @ 10 V | 290 nC @ 10 V | 290 nC @ 10 V | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Package / Case | SOT-227-4, miniBLOC | TO-247-3 Variant | TO-264-3, TO-264AA | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 77A (Tc) | 75A (Tc) | 75A (Tc) | - |
| Vgs (th) (Max) @ Id | 3.9V @ 5.4mA | 5V @ 2.5mA | 5V @ 2.5mA | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Serie | - | - | POWER MOS 8™ | - |
| Basis Produktnummer | APT77N60 | APT75M50 | APT75M50 | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Supplier Device Package | ISOTOP® | T-MAX™ | TO-264 [L] | - |
| Power Dissipation (Max) | 568W (Tc) | 1040W (Tc) | 1040W (Tc) | - |
| Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 500 V | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 60A, 10V | 75mOhm @ 37A, 10V | 75mOhm @ 37A, 10V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Mounting Type | Chassis Mount | Through Hole | Through Hole | - |
Eroflueden APT77N60JC3 PDF DataDhusts an Microchip Technology Dokumentatioun fir APT77N60JC3 - Microchip Technology.
APT77N60JCMicrosemiIGBT Module
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APT75GT120JU3Microchip TechnologyIGBT MOD 1200V 100A 416W SOT227APT7843ADC07ANPCEAPT7L05SFHOLTEKAPT75GT120JDQ3MicrosemiIGBT ModuleAPT77N60JC3XAPTIGBT ModuleAPT75GT120JDF3MicrosemiIGBT ModuleAPT75GT120JRDQ3Microchip TechnologyIGBT MOD 1200V 97A 480W ISOTOPAPT7846ADC07ANPCEAPT7M120APTAPT7846ODAA1ANPCEAPT75GT120JU2Microchip TechnologyIGBT MOD 1200V 100A 416W SOT227| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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