RCX081N20 Tech Spezifikatioune
Rohm Semiconductor - RCX081N20 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RCX081N20
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 5.25V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 770mOhm @ 4A, 10V | |
Power Dissipation (Max) | 2.23W (Ta), 40W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | RCX081 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RCX081N20.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RCX081N20 | STP50NE10 | SI3447DV | FDD6696 |
Hiersteller | Rohm Semiconductor | STMicroelectronics | Fairchild Semiconductor | onsemi |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Power Dissipation (Max) | 2.23W (Ta), 40W (Tc) | 180W (Tc) | 800mW (Ta) | 3.8W (Ta), 52W (Tc) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 770mOhm @ 4A, 10V | 27mOhm @ 25A, 10V | 33mOhm @ 5.5A, 4.5V | 8mOhm @ 13A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V | 6000 pF @ 25 V | 1926 pF @ 10 V | 1715 pF @ 15 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 50A (Tc) | 5.5A (Ta) | 13A (Ta), 50A (Tc) |
Vgs (th) (Max) @ Id | 5.25V @ 1mA | 4V @ 250µA | 1.5V @ 250µA | 3V @ 250µA |
Package / Case | TO-220-3 Full Pack | TO-220-3 | SOT-23-6 Thin, TSOT-23-6 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Entworf fir Source Voltage (Vdss) | 200 V | 100 V | 20 V | 30 V |
Supplier Device Package | TO-220FM | TO-220 | SuperSOT™-6 | TO-252AA |
Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V | 166 nC @ 10 V | 30 nC @ 4.5 V | 24 nC @ 5 V |
Operatioun Temperatur | 150°C (TJ) | 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | RCX081 | STP50N | - | FDD669 |
Vgs (Max) | ±30V | ±20V | ±8V | ±16V |
Serie | - | STripFET™ | PowerTrench® | PowerTrench® |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 1.8V, 4.5V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Package protegéieren | Bulk | Tube | Bulk | Tape & Reel (TR) |
Eroflueden RCX081N20 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RCX081N20 - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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