IXFX120N25 Tech Spezifikatioune
IXYS - IXFX120N25 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFX120N25
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 8mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PLUS247™-3 | |
Serie | HiPerFET™ | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 560W (Tc) | |
Package / Case | TO-247-3 Variant | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | IXFX120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFX120N25.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFX120N25 | IXFX150N15 | IXFT44N50P | IXFT58N20Q |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V | 360 nC @ 10 V | 98 nC @ 10 V | 140 nC @ 10 V |
Package / Case | TO-247-3 Variant | TO-247-3 Variant | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | HiPerFET™ | HiPerFET™ | HiPerFET™, Polar | HiPerFET™ |
Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V | 12.5mOhm @ 75A, 10V | 140mOhm @ 22A, 10V | 40mOhm @ 29A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V | 9100 pF @ 25 V | 5440 pF @ 25 V | 3600 pF @ 25 V |
Power Dissipation (Max) | 560W (Tc) | 560W (Tc) | 658W (Tc) | 300W (Tc) |
Basis Produktnummer | IXFX120 | IXFX150 | IXFT44 | IXFT58 |
Entworf fir Source Voltage (Vdss) | 250 V | 150 V | 500 V | 200 V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 150A (Tc) | 44A (Tc) | 58A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (th) (Max) @ Id | 4V @ 8mA | 4V @ 8mA | 5V @ 4mA | 4V @ 4mA |
Supplier Device Package | PLUS247™-3 | PLUS247™-3 | TO-268AA | TO-268AA |
Eroflueden IXFX120N25 PDF DataDhusts an IXYS Dokumentatioun fir IXFX120N25 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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