IXTQ64N25P Tech Spezifikatioune
IXYS - IXTQ64N25P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ64N25P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | Polar | |
Rds On (Max) @ Id, Vgs | 49mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 400W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Tc) | |
Basis Produktnummer | IXTQ64 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ64N25P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTQ64N25P | IXTQ82N25P | IXTQ60N10T | IXTQ80N28T |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 250 V | 250 V | 100 V | 280 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4.5V @ 50µA | 5V @ 1mA |
Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
Rds On (Max) @ Id, Vgs | 49mOhm @ 500mA, 10V | 35mOhm @ 41A, 10V | 18mOhm @ 25A, 10V | 49mOhm @ 500mA, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | 142 nC @ 10 V | 49 nC @ 10 V | 115 nC @ 10 V |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V | 4800 pF @ 25 V | 2650 pF @ 25 V | 5000 pF @ 25 V |
Supplier Device Package | TO-3P | TO-3P | TO-3P | TO-3P |
Power Dissipation (Max) | 400W (Tc) | 500W (Tc) | 176W (Tc) | 500W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Tc) | 82A (Tc) | 60A (Tc) | 80A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Basis Produktnummer | IXTQ64 | IXTQ82 | IXTQ60 | IXTQ80 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | Polar | Polar | Trench | - |
Eroflueden IXTQ64N25P PDF DataDhusts an IXYS Dokumentatioun fir IXTQ64N25P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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