IXTQ50N25T Tech Spezifikatioune
IXYS - IXTQ50N25T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ50N25T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | Trench | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V | |
Power Dissipation (Max) | 400W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | IXTQ50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ50N25T.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTQ50N25T | IXTQ460P2 | IXTQ48N20T | IXTQ480P2 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | IXTQ50 | IXTQ460 | IXTQ48 | IXTQ480 |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | Trench | PolarP2™ | Trench | PolarP2™ |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 24A (Tc) | 48A (Tc) | 52A (Tc) |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Supplier Device Package | TO-3P | TO-3P | TO-3P | TO-3P |
Entworf fir Source Voltage (Vdss) | 250 V | 500 V | 200 V | 500 V |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | 48 nC @ 10 V | 60 nC @ 10 V | 108 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V | 270mOhm @ 12A, 10V | 50mOhm @ 24A, 10V | 120mOhm @ 26A, 10V |
Vgs (th) (Max) @ Id | 5V @ 1mA | 4.5V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 400W (Tc) | 480W (Tc) | 250W (Tc) | 960W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | 2890 pF @ 25 V | 3090 pF @ 25 V | 6800 pF @ 25 V |
Eroflueden IXTQ50N25T PDF DataDhusts an IXYS Dokumentatioun fir IXTQ50N25T - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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