IXTQ50N20P Tech Spezifikatioune
IXYS - IXTQ50N20P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTQ50N20P
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | IXYS Corporation | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-3P | |
| Serie | Polar | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 360W (Tc) | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2720 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
| Basis Produktnummer | IXTQ50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTQ50N20P.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IXTQ50N20P | IXTQ36N50P | IXTQ64N25P | IXTQ54N30T |
| Hiersteller | IXYS | IXYS | IXYS | IXYS |
| Serie | Polar | Polar | Polar | Trench |
| Vgs (Max) | ±20V | ±30V | ±20V | - |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 85 nC @ 10 V | 105 nC @ 10 V | - |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Supplier Device Package | TO-3P | TO-3P | TO-3P | TO-3P |
| Basis Produktnummer | IXTQ50 | IXTQ36 | IXTQ64 | IXTQ54 |
| Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 36A (Tc) | 64A (Tc) | 54A (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Entworf fir Source Voltage (Vdss) | 200 V | 500 V | 250 V | 300 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 2720 pF @ 25 V | 5500 pF @ 25 V | 3450 pF @ 25 V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 50A, 10V | 170mOhm @ 500mA, 10V | 49mOhm @ 500mA, 10V | - |
| Power Dissipation (Max) | 360W (Tc) | 540W (Tc) | 400W (Tc) | - |
| FET Feature | - | - | - | - |
Eroflueden IXTQ50N20P PDF DataDhusts an IXYS Dokumentatioun fir IXTQ50N20P - IXYS.
IXTQ36N50PIXYSMOSFET N-CH 500V 36A TO3PIXTQ64N25PIXYSMOSFET N-CH 250V 64A TO3PIXTQ54N30TIXYSMOSFET N-CH 300V 54A TO3PIXTQ52N30PIXYSMOSFET N-CH 300V 52A TO3PIXTQ62N15PIXYSMOSFET N-CH 150V 62A TO3PIXTQ60N10TIXYSMOSFET N-CH 100V 60A TO3PIXTQ48N20TIXYSMOSFET N-CH 200V 48A TO3PIXTQ50N28TIXYS / LittelfuseIXTQ36N50P MOSIXYS / LittelfuseIXTQ36N50IXYS / LittelfuseIXTQ460P2IXYSMOSFET N-CH 500V 24A TO3PIXTQ69N30PIXYSMOSFET N-CH 300V 69A TO3PIXTQ60N20TIXYSMOSFET N-CH 200V 60A TO3PIXTQ42N25PIXYSMOSFET N-CH 250V 42A TO3PIXTQ480P2IXYSMOSFET N-CH 500V 52A TO3PIXTQ44N50PIXYSMOSFET N-CH 500V 44A TO3PIXTQ50N25TIXYSMOSFET N-CH 250V 50A TO3PIXTQ480PIXYS / Littelfuse| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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