IXFH28N60P3 Tech Spezifikatioune
IXYS - IXFH28N60P3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFH28N60P3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 2.5mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AD (IXFH) | |
Serie | HiPerFET™, Polar3™ | |
Rds On (Max) @ Id, Vgs | 260mOhm @ 14A, 10V | |
Power Dissipation (Max) | 695W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3560 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Tc) | |
Basis Produktnummer | IXFH28 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFH28N60P3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFH28N60P3 | IXFH26N50P | IXFH320N10T2 | IXFH30N50P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Serie | HiPerFET™, Polar3™ | HiPerFET™, Polar | HiPerFET™, TrenchT2™ | HiPerFET™, Polar |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Input Capacitance (Ciss) (Max) @ Vds | 3560 pF @ 25 V | 3600 pF @ 25 V | 26000 pF @ 25 V | 4150 pF @ 25 V |
Power Dissipation (Max) | 695W (Tc) | 400W (Tc) | 1000W (Tc) | 460W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | IXFH28 | IXFH26 | IXFH320 | IXFH30 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Tc) | 26A (Tc) | 320A (Tc) | 30A (Tc) |
Rds On (Max) @ Id, Vgs | 260mOhm @ 14A, 10V | 230mOhm @ 13A, 10V | 3.5mOhm @ 100A, 10V | 200mOhm @ 15A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 100 V | 500 V |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | 60 nC @ 10 V | 430 nC @ 10 V | 70 nC @ 10 V |
Vgs (th) (Max) @ Id | 5V @ 2.5mA | 5.5V @ 4mA | 4V @ 250µA | 5V @ 4mA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
Eroflueden IXFH28N60P3 PDF DataDhusts an IXYS Dokumentatioun fir IXFH28N60P3 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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