IXFH320N10T2 Tech Spezifikatioune
IXYS - IXFH320N10T2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFH320N10T2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AD (IXFH) | |
Serie | HiPerFET™, TrenchT2™ | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V | |
Power Dissipation (Max) | 1000W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 26000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 430 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 320A (Tc) | |
Basis Produktnummer | IXFH320 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFH320N10T2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFH320N10T2 | IXFH28N50Q | IXFH36N55Q | IXFH26N60Q |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Gate Charge (Qg) (Max) @ Vgs | 430 nC @ 10 V | 94 nC @ 10 V | 128 nC @ 10 V | 200 nC @ 10 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | HiPerFET™, TrenchT2™ | HiPerFET™ | HiPerFET™, Q Class | HiPerFET™ |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V | 200mOhm @ 14A, 10V | 160mOhm @ 500mA, 10V | 250mOhm @ 13A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 4mA | 4.5V @ 4mA | 4.5V @ 4mA |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±30V | ±30V | ±20V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 1000W (Tc) | 375W (Tc) | 500W (Tc) | 360W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 320A (Tc) | 28A (Tc) | 36A (Tc) | 26A (Tc) |
Basis Produktnummer | IXFH320 | IXFH28 | IXFH36 | IXFH26 |
Entworf fir Source Voltage (Vdss) | 100 V | 500 V | 550 V | 600 V |
Input Capacitance (Ciss) (Max) @ Vds | 26000 pF @ 25 V | 3000 pF @ 25 V | 4500 pF @ 25 V | 5100 pF @ 25 V |
Eroflueden IXFH320N10T2 PDF DataDhusts an IXYS Dokumentatioun fir IXFH320N10T2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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