IXFH26N55Q Tech Spezifikatioune
IXYS - IXFH26N55Q technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFH26N55Q
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4.5V @ 4mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AD (IXFH) | |
Serie | HiPerFET™ | |
Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 550 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 26A (Tc) | |
Basis Produktnummer | IXFH26 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFH26N55Q.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFH26N55Q | IXFH24N50Q | IXFH26N60P | IXFH28N50Q |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
FET Feature | - | - | - | - |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (th) (Max) @ Id | 4.5V @ 4mA | 4.5V @ 4mA | 5V @ 4mA | 4.5V @ 4mA |
Serie | HiPerFET™ | HiPerFET™ | HiPerFET™, Polar | HiPerFET™ |
Power Dissipation (Max) | 375W (Tc) | 300W (Tc) | 460W (Tc) | 375W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V | 3900 pF @ 25 V | 4150 pF @ 25 V | 3000 pF @ 25 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Entworf fir Source Voltage (Vdss) | 550 V | 500 V | 600 V | 500 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V | 230mOhm @ 12A, 10V | 270mOhm @ 500mA, 10V | 200mOhm @ 14A, 10V |
Basis Produktnummer | IXFH26 | IXFH24 | IXFH26 | IXFH28 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V | 95 nC @ 10 V | 72 nC @ 10 V | 94 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 26A (Tc) | 24A (Tc) | 26A (Tc) | 28A (Tc) |
Supplier Device Package | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) | TO-247AD (IXFH) |
Eroflueden IXFH26N55Q PDF DataDhusts an IXYS Dokumentatioun fir IXFH26N55Q - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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