1N5404 Tech Spezifikatioune
Diotec Semiconductor - 1N5404 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diotec Semiconductor - 1N5404
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diotec Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-201 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 1.5 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-201AA, DO-27, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -50°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diotec Semiconductor 1N5404.
| Produktiounsattriff | |
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 |
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|---|---|---|---|---|
| Part Number | 1N5404 | 1N5404G | 1N5402RLG | 1N5404 |
| Hiersteller | Diotec Semiconductor | Taiwan Semiconductor Corporation | onsemi | MDD |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | 5 µA @ 400 V | 10 µA @ 200 V | - |
| Supplier Device Package | DO-201 | DO-201AD | Axial | DO-27 (DO-201AD) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | - |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V | 200 V | 400 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | 1 V @ 3 A | 1 V @ 3 A | 1.2 V @ 3 A |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Box (TB) |
| Serie | - | - | - | DO-27 |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | DO-201AA, DO-27, Axial | DO-201AD, Axial | DO-201AA, DO-27, Axial | DO-201AD, Axial |
| Operatiounstemperatur - Junction | -50°C ~ 175°C | -55°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Reverse Recovery Time (trr) | 1.5 µs | - | - | - |
| Capacitance @ Vr, F. | - | 25pF @ 4V, 1MHz | - | 30pF @ 4V, 1MHz |
Eroflueden 1N5404 PDF DataDhusts an Diotec Semiconductor Dokumentatioun fir 1N5404 - Diotec Semiconductor.
1N5402_AY_10001PANJIT1N5404GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 3A DO201AD1N5402RLGonsemiDIODE GEN PURP 200V 3A AXIAL1N5404MDDDIODE GEN PURP 400V 3A DO27
1N5404SMC Diode SolutionsDIODE GEN PURP 400V 3A DO201AD
1N5404-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 3A DO201AD
1N5404onsemiDIODE GEN PURP 400V 3A DO201AD1N5402RLonsemiDIODE GEN PURP 200V 3A AXIAL1N5402GonsemiDIODE GEN PURP 200V 3A AXIAL1N5404GonsemiDIODE GEN PURP 400V 3A AXIAL1N5403-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 300V 3A DO201AD1N5404NTE Electronics, IncDIODE GEN PURP 400V 3A DO201AD1N5404 T/P
1N5404/S3GTAEC Product (Toshiba Electronic Devices and Stora1N5403RLGAMI Semiconductor/onsemi
1N5404Fairchild SemiconductorDIODE GEN PURP 1V 3A DO201
1N5404-BDiodes IncorporatedDIODE GEN PURP 400V 3A DO201AD1N5404-TDiodes IncorporatedDIODE GEN PURP 400V 3A DO201AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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