1N5402G Tech Spezifikatioune
onsemi - 1N5402G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 1N5402G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | Axial | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-201AA, DO-27, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N5402 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 1N5402G.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | 1N5402G | 1N5402G | 1N5404 | 1N5403-E3/54 |
| Hiersteller | onsemi | SMC Diode Solutions | MDD | Vishay General Semiconductor - Diodes Division |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 3 A | 1.1 V @ 3 A | 1.2 V @ 3 A | 1.2 V @ 3 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 5 µA @ 200 V | - | 5 µA @ 300 V |
| Serie | - | - | DO-27 | - |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | - | Standard Recovery >500ns, > 200mA (Io) |
| Supplier Device Package | Axial | DO-201AD | DO-27 (DO-201AD) | DO-201AD |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 400 V | 300 V |
| Package protegéieren | Bulk | Tape & Box (TB) | Tape & Box (TB) | Tape & Reel (TR) |
| Basis Produktnummer | 1N5402 | 1N540 | - | 1N5403 |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Capacitance @ Vr, F. | - | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz |
| Package / Case | DO-201AA, DO-27, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden 1N5402G PDF DataDhusts an onsemi Dokumentatioun fir 1N5402G - onsemi.
1N5402GSMC Diode SolutionsDIODE GEN PURP 200V 3A DO201AD1N5404MDDDIODE GEN PURP 400V 3A DO271N5403-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 300V 3A DO201AD
1N5402onsemiDIODE GEN PURP 200V 3A DO201AD
1N5402-TDiodes IncorporatedDIODE GEN PURP 200V 3A DO201AD1N5402 T/BPANJIT1N5402NTE Electronics, IncDIODE GEN PURP 200V 3A DO201AD
1N5402SMC Diode SolutionsDIODE GEN PURP 200V 3A DO201AD
1N5402RLonsemiDIODE GEN PURP 200V 3A AXIAL1N5404Diotec SemiconductorDIODE GEN PURP 400V 3A DO2011N5403RLGAMI Semiconductor/onsemi1N5402_AY_10001PANJIT
1N5404Fairchild SemiconductorDIODE GEN PURP 1V 3A DO201
1N5402GTaiwan Semiconductor CorporationDIODE GEN PURP 200V 3A DO201AD1N5402RLGonsemiDIODE GEN PURP 200V 3A AXIAL1N5404NTE Electronics, IncDIODE GEN PURP 400V 3A DO201AD1N5402-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 3A DO201AD1N5402Fairchild SemiconductorDIODE GEN PURP 1V 3A DO201| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.