1N5404 Tech Spezifikatioune
SMC Diode Solutions - 1N5404 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu SMC Diode Solutions - 1N5404
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Sangdest Microelectronics / Nanjing (SMC Diode Solutions) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-201AD | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-201AD, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Cut Tape (CT) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 30pF @ 0V, 1MHz | |
| Basis Produktnummer | 1N540 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu SMC Diode Solutions 1N5404.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N5404 | 1N5404-E3/54 | 1N5404 | 1N5404 |
| Hiersteller | SMC Diode Solutions | Vishay General Semiconductor - Diodes Division | MDD | NTE Electronics, Inc |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | 5 µA @ 400 V | - | 5 µA @ 400 V |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V | 400 V | 400 V |
| Serie | - | - | DO-27 | - |
| Supplier Device Package | DO-201AD | DO-201AD | DO-27 (DO-201AD) | DO-201AD |
| Capacitance @ Vr, F. | 30pF @ 0V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz |
| Basis Produktnummer | 1N540 | 1N5404 | - | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | - | Standard Recovery >500ns, > 200mA (Io) |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Box (TB) | Bag |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | 1.2 V @ 3 A | 1.2 V @ 3 A | 1.2 V @ 3 A |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Technologie | Standard | Standard | Standard | Standard |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -50°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C |
Eroflueden 1N5404 PDF DataDhusts an SMC Diode Solutions Dokumentatioun fir 1N5404 - SMC Diode Solutions.
1N5404/S3GTAEC Product (Toshiba Electronic Devices and Stora1N5404-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 3A DO201AD1N5404MDDDIODE GEN PURP 400V 3A DO271N5404NTE Electronics, IncDIODE GEN PURP 400V 3A DO201AD1N5404Diotec SemiconductorDIODE GEN PURP 400V 3A DO2011N5403-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 300V 3A DO201AD
1N5404-TDiodes IncorporatedDIODE GEN PURP 400V 3A DO201AD1N5404-BDiodes IncorporatedDIODE GEN PURP 400V 3A DO201AD1N5402_AY_10001PANJIT
1N5404GonsemiDIODE GEN PURP 400V 3A AXIAL1N5402RLonsemiDIODE GEN PURP 200V 3A AXIAL
1N5404GSMC Diode SolutionsDIODE GEN PURP 400V 3A DO201AD1N5402RLGonsemiDIODE GEN PURP 200V 3A AXIAL
1N5404Fairchild SemiconductorDIODE GEN PURP 1V 3A DO2011N5404 T/P1N5403RLGAMI Semiconductor/onsemi
1N5404onsemiDIODE GEN PURP 400V 3A DO201AD
1N5404GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 3A DO201AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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