GBJ2006-F Tech Spezifikatioune
Diodes Incorporated - GBJ2006-F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - GBJ2006-F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Peak Reverse (Max) | 600 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 10 A | |
| Technologie | Standard | |
| Supplier Device Package | GBJ | |
| Serie | - | |
| Package / Case | 4-SIP, GBJ |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 20 A | |
| Basis Produktnummer | GBJ2006 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated GBJ2006-F.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | GBJ2006-F | GBJ2010 | GBJ2006 | GBJ2006 |
| Hiersteller | Diodes Incorporated | SMC Diode Solutions | SMC Diode Solutions | Diodes Incorporated |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | 4-SIP, GBJ | 4-ESIP | 4-ESIP | 4-SIP, GBJ |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 10 A | 1.1 V @ 20 A | 1.1 V @ 20 A | 1.05 V @ 10 A |
| Voltage - Peak Reverse (Max) | 600 V | 1 kV | 600 V | 600 V |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Basis Produktnummer | GBJ2006 | GBJ2010 | GBJ2006 | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | GBJ | GBJ | GBJ | GBJ |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 20 A | 20 A | 20 A | 20 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | 5 µA @ 1000 V | 5 µA @ 600 V | 10 µA @ 400 V |
Eroflueden GBJ2006-F PDF DataDhusts an Diodes Incorporated Dokumentatioun fir GBJ2006-F - Diodes Incorporated.
GBJ2010SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 20A GBJGBJ2006SMC Diode SolutionsBRIDGE RECT 1PHASE 600V 20A GBJGBJ2006Diodes IncorporatedBRIDGE RECT 1PHASE 600V 20A GBJ
GBJ20JSURGE20A -600V - GBJ(5S) - BRIDGEGBJ2008SMC Diode SolutionsBRIDGE RECT 1PHASE 800V 20A GBJ
GBJ15MGeneSiC Semiconductor1000V 15A GBJ SINGLE PHASE BRIDG
GBJ2006HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIEGBJ2010-FDiodes IncorporatedBRIDGE RECT 1PHASE 1KV 20A GBJ
GBJ2006Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 600V 20A 6KBJ
GBJ208Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 800V 2A 2KBJ
GBJ2008Yangjie Technology6KBJ 800V 20.0A Diodes BridgeGBJ2002-FDiodes IncorporatedBRIDGE RECT 1PHASE 200V 20A GBJGBJ2008-FDiodes IncorporatedBRIDGE RECT 1PHASE 800V 20A GBJGBJ15MSURGE15A -1000V - GBJ - BRIDGE
GBJ2002FDiodes IncorporatedGBJ2010Yangjie Technology6KBJ 1000V 20.0A Diodes BridgeGBJ2010Diodes IncorporatedBRIDGE RECT 1PHASE 1KV 20A GBJGBJ2005Diodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.