GBJ15M Tech Spezifikatioune
GeneSiC Semiconductor - GBJ15M technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - GBJ15M
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 7.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBJ | |
| Serie | - | |
| Package / Case | 4-SIP, GBJ |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 15 A | |
| Basis Produktnummer | GBJ15 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor GBJ15M.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | GBJ15M | GBJ15K | GBJ2002-F | GBJ1510-F |
| Hiersteller | GeneSiC Semiconductor | GeneSiC Semiconductor | Diodes Incorporated | Diodes Incorporated |
| Voltage - Peak Reverse (Max) | 1 kV | 800 V | 200 V | 1 kV |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 15 A | 15 A | 20 A | 15 A |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 7.5 A | 1.05 V @ 7.5 A | 1.05 V @ 10 A | 1.05 V @ 7.5 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | - | - | - |
| Basis Produktnummer | GBJ15 | GBJ15 | GBJ2002 | GBJ1510 |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 10 µA @ 800 V | 10 µA @ 200 V | 10 µA @ 1000 V |
| Package protegéieren | Bulk | Bulk | Tube | Tube |
| Supplier Device Package | GBJ | GBJ | GBJ | GBJ |
| Package / Case | 4-SIP, GBJ | 4-SIP, GBJ | 4-SIP, GBJ | 4-SIP, GBJ |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
Eroflueden GBJ15M PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir GBJ15M - GeneSiC Semiconductor.
GBJ15KGeneSiC Semiconductor800V 15A GBJ SINGLE PHASE BRIDGEGBJ2002-FDiodes IncorporatedBRIDGE RECT 1PHASE 200V 20A GBJGBJ1510-FDiodes IncorporatedBRIDGE RECT 1PHASE 1KV 15A GBJGBJ2006Diodes IncorporatedBRIDGE RECT 1PHASE 600V 20A GBJ
GBJ1510AYangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 15A 6KBJGBJ15JGeneSiC Semiconductor600V 15A GBJ SINGLE PHASE BRIDGE
GBJ15L06LITEON
GBJ2006HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIEGBJ2006-FDiodes IncorporatedBRIDGE RECT 1PHASE 600V 20A GBJ
GBJ2005Diodes Incorporated
GBJ15MGood-Ark SemiconductorBRIDGE RECTIFIER, GENERAL PURPOSGBJ1510HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIE
GBJ15MSURGE15A -1000V - GBJ - BRIDGE
GBJ2008Yangjie Technology6KBJ 800V 20.0A Diodes Bridge
GBJ2006SMC Diode SolutionsBRIDGE RECT 1PHASE 600V 20A GBJGBJ2002FDiodes Incorporated
GBJ2006Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 600V 20A 6KBJGBJ15JSURGE15A -600V - GBJ - BRIDGE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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