GBJ2008-F Tech Spezifikatioune
Diodes Incorporated - GBJ2008-F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - GBJ2008-F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Peak Reverse (Max) | 800 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 10 A | |
| Technologie | Standard | |
| Supplier Device Package | GBJ | |
| Serie | - | |
| Package / Case | 4-SIP, GBJ |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 800 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 20 A | |
| Basis Produktnummer | GBJ2008 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated GBJ2008-F.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBJ2008-F | GBJ2008 | GBJ2006 | GBJ208 |
| Hiersteller | Diodes Incorporated | Yangjie Technology | HY Electronic (Cayman) Limited | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Package / Case | 4-SIP, GBJ | 4-SIP, GBJ | 4-SIP, GBJ | 4-ESIP, KBJ |
| Serie | - | GBJ | GBJ | - |
| Technologie | Standard | Standard | Standard | Standard |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 20 A | 20 A | 20 A | 2 A |
| Supplier Device Package | GBJ | GBJ | GBJ | 2KBJ |
| Basis Produktnummer | GBJ2008 | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 10 A | 1.05 V @ 10 A | 1 V @ 10 A | 1 V @ 1 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 800 V | 10 µA @ 800 V | 5 µA @ 600 V | 5 µA @ 800 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Voltage - Peak Reverse (Max) | 800 V | 800 V | 600 V | 800 V |
Eroflueden GBJ2008-F PDF DataDhusts an Diodes Incorporated Dokumentatioun fir GBJ2008-F - Diodes Incorporated.
GBJ2008Yangjie Technology6KBJ 800V 20.0A Diodes Bridge
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GBJ2006Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 600V 20A 6KBJGBJ2006Diodes IncorporatedBRIDGE RECT 1PHASE 600V 20A GBJGBJ2010Diodes IncorporatedBRIDGE RECT 1PHASE 1KV 20A GBJGBJ2502-FDiodes IncorporatedBRIDGE RECT 1PHASE 200V 25A GBJGBJ2002FDiodes IncorporatedGBJ2006-FDiodes IncorporatedBRIDGE RECT 1PHASE 600V 20A GBJGBJ2006SMC Diode SolutionsBRIDGE RECT 1PHASE 600V 20A GBJ
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GBJ20JGeneSiC Semiconductor600V 20A GBJ SINGLE PHASE BRIDGE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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