DMN3110S-7 Tech Spezifikatioune
Diodes Incorporated - DMN3110S-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN3110S-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 73mOhm @ 3.1mA, 10V | |
Power Dissipation (Max) | 740mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 305.8 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
Basis Produktnummer | DMN3110 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN3110S-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN3110S-7 | DMN3110LCP3-7 | DMN3112SSS-13 | DMN3115UDM-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | DMN3110 | DMN3110 | DMN3112 | DMN3115 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 1.8V, 8V | 4.5V, 10V | 1.5V, 4.5V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 1.1V @ 250µA | 2.2V @ 250µA | 1V @ 250µA |
Package / Case | TO-236-3, SC-59, SOT-23-3 | 3-XFDFN | 8-SOIC (0.154", 3.90mm Width) | SOT-23-6 |
Rds On (Max) @ Id, Vgs | 73mOhm @ 3.1mA, 10V | 69mOhm @ 500mA, 8V | 57mOhm @ 5.8A, 10V | 60mOhm @ 6A, 4.5V |
Serie | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 305.8 pF @ 15 V | 150 pF @ 15 V | 268 pF @ 15 V | 476 pF @ 15 V |
Power Dissipation (Max) | 740mW (Ta) | 1.38W | 2.5W (Ta) | 900mW (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V | 1.52 nC @ 4.5 V | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 3.2A (Ta) | 6A (Ta) | 3.2A (Ta) |
Supplier Device Package | SOT-23-3 | X2-DFN1006-3 | 8-SOP | SOT-26 |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±20V | 12V | ±20V | ±8V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden DMN3110S-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN3110S-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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