DMN30H4D0L-7 Tech Spezifikatioune
Diodes Incorporated - DMN30H4D0L-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN30H4D0L-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V | |
| Power Dissipation (Max) | 310mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 187.3 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 10V | |
| Entworf fir Source Voltage (Vdss) | 300 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | |
| Basis Produktnummer | DMN30 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN30H4D0L-7.
| Produktiounsattriff |  |
|
 |
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|---|---|---|---|---|
| Part Number | DMN30H4D0L-7 | DMN3067LW-7 | DMN3110LCP3-7 | DMN3065LW-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 | 3-XFDFN | SC-70, SOT-323 |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 1.5V @ 250µA | 1.1V @ 250µA | 1.5V @ 250µA |
| Supplier Device Package | SOT-23-3 | SOT-323 | X2-DFN1006-3 | SOT-323 |
| Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 10V | 2.5V, 4.5V | 1.8V, 8V | 2.5V, 10V |
| Vgs (Max) | ±20V | ±12V | 12V | ±12V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | 2.6A (Ta) | 3.2A (Ta) | 4A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 10 V | 4.6 nC @ 4.5 V | 1.52 nC @ 4.5 V | 11.7 nC @ 10 V |
| Basis Produktnummer | DMN30 | DMN3067 | DMN3110 | DMN3065 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power Dissipation (Max) | 310mW (Ta) | 500mW (Ta) | 1.38W | 770mW (Ta) |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 187.3 pF @ 25 V | 447 pF @ 10 V | 150 pF @ 15 V | 465 pF @ 15 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V | 67mOhm @ 2.5A, 4.5V | 69mOhm @ 500mA, 8V | 52mOhm @ 4A, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 300 V | 30 V | 30 V | 30 V |
Eroflueden DMN30H4D0L-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN30H4D0L-7 - Diodes Incorporated.
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DMN3070SSN-7Diodes IncorporatedMOSFET N-CH 30V 4.2A SC59| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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