DMN30H4D1S-7 Tech Spezifikatioune
Diodes Incorporated - DMN30H4D1S-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN30H4D1S-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V | |
Power Dissipation (Max) | 360mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 300 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 430mA (Ta) | |
Basis Produktnummer | DMN30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN30H4D1S-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN30H4D1S-7 | DMN3112SSS-13 | DMN3071LFR4-7 | DMN3065LW-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Package / Case | TO-236-3, SC-59, SOT-23-3 | 8-SOIC (0.154", 3.90mm Width) | 3-XFDFN | SC-70, SOT-323 |
Entworf fir Source Voltage (Vdss) | 300 V | 30 V | 30 V | 30 V |
Supplier Device Package | SOT-23-3 | 8-SOP | X2-DFN1010-3 | SOT-323 |
Vgs (Max) | ±20V | ±20V | ±20V | ±12V |
Basis Produktnummer | DMN30 | DMN3112 | DMN3071 | DMN3065 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 4Ohm @ 300mA, 10V | 57mOhm @ 5.8A, 10V | 65mOhm @ 3.2A, 10V | 52mOhm @ 4A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 430mA (Ta) | 6A (Ta) | 3.4A (Ta) | 4A (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 2.5V, 10V |
Power Dissipation (Max) | 360mW (Ta) | 2.5W (Ta) | 500mW | 770mW (Ta) |
Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 25 V | 268 pF @ 15 V | 190 pF @ 15 V | 465 pF @ 15 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 1.5V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V | - | 4.5 nC @ 10 V | 11.7 nC @ 10 V |
Eroflueden DMN30H4D1S-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN30H4D1S-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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